Verticals are GDS and laterals are GSD pin out.
Laterals get away with a pot for bias.
Verticals tend to need a Vbe or Vgs mulitplier for bias.
Real of Fake?
ok I have sourced some K1259 and J200 MOSFETS from cricklewood in the uk (Cricklewood Electronics | CCTV Online Store)
its for a repair of a Sony TA-3000ES
I have a Peak DCA pro
J200 gives
P-Ch Enhancement mode MOSFET Red-D Green-S Blue-G
Vgs(on)=1.421V at Id=4.99mA and Ig=0µA Vgs(off)=0.941V at Id=5.1µA
gm=45.1mA/V at Id=3.0mA to 5.0mA Rds(on)<1.0Ω at Id=5.0mA and Vgs=8.0V with body diode
K1529 gives
N-Ch Enhancement mode MOSFET Red-D Green-S Blue-G
Vgs(on)=2.423V at Id=5.04mA and Ig=0µA Vgs(off)=1.775V at Id=4.8µA
gm=38.5mA/V at Id=3.0mA to 5.0mA Rds(on)<1.0Ω at Id=5.0mA and Vgs=8.0V with body diode
Vgs off for the 4 off J200's are 0.941, 0.914,, 0.878 and 0.910V
Vgs off for the 4 off K1529's are 1.775, 1.698, 1.791 & 1.862V
So the K1259's are within spec of the Y variant (Vgs off range O: 0.8- 1.6 Y: 1.4 to 2.8 from datasheet)
So the J200's are not! They look like O variant (Vgs off range O: -0.8 to -1.6 Y: -1.4 to -2.8 from datasheet)
(mind you the DCA75 says +ve voltages, spec sheet says -ve.....
so the question is
1) Does it matter as long as N-N and P-P reasonably matched?
2) I have read you match N to N and P to P on amplifiers. What is the max difference in mV? ( I have read within 100mV, but some say withing 40mV, and seen matched pairs at 15mV)
3) RTFM, (i've just read it) DCA75 can drive the gate between 0V and 8V, evidently no -ve voltages, and implies MOSFET's don't care if +ve or -ve on gate!) Is this true, and would the +ve Vgs(off) be different to the -ve Vgs(off) values?
Ctt attached, also photo of transistors
ok I have sourced some K1259 and J200 MOSFETS from cricklewood in the uk (Cricklewood Electronics | CCTV Online Store)
its for a repair of a Sony TA-3000ES
I have a Peak DCA pro
J200 gives
P-Ch Enhancement mode MOSFET Red-D Green-S Blue-G
Vgs(on)=1.421V at Id=4.99mA and Ig=0µA Vgs(off)=0.941V at Id=5.1µA
gm=45.1mA/V at Id=3.0mA to 5.0mA Rds(on)<1.0Ω at Id=5.0mA and Vgs=8.0V with body diode
K1529 gives
N-Ch Enhancement mode MOSFET Red-D Green-S Blue-G
Vgs(on)=2.423V at Id=5.04mA and Ig=0µA Vgs(off)=1.775V at Id=4.8µA
gm=38.5mA/V at Id=3.0mA to 5.0mA Rds(on)<1.0Ω at Id=5.0mA and Vgs=8.0V with body diode
Vgs off for the 4 off J200's are 0.941, 0.914,, 0.878 and 0.910V
Vgs off for the 4 off K1529's are 1.775, 1.698, 1.791 & 1.862V
So the K1259's are within spec of the Y variant (Vgs off range O: 0.8- 1.6 Y: 1.4 to 2.8 from datasheet)
So the J200's are not! They look like O variant (Vgs off range O: -0.8 to -1.6 Y: -1.4 to -2.8 from datasheet)
(mind you the DCA75 says +ve voltages, spec sheet says -ve.....
so the question is
1) Does it matter as long as N-N and P-P reasonably matched?
2) I have read you match N to N and P to P on amplifiers. What is the max difference in mV? ( I have read within 100mV, but some say withing 40mV, and seen matched pairs at 15mV)
3) RTFM, (i've just read it) DCA75 can drive the gate between 0V and 8V, evidently no -ve voltages, and implies MOSFET's don't care if +ve or -ve on gate!) Is this true, and would the +ve Vgs(off) be different to the -ve Vgs(off) values?
Ctt attached, also photo of transistors
Attachments
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