In the datasheet of this transistor it is mentioned that the maximal continuous collector current Ice = 20A. Also the SOA chart shows that Vce=10V with Ice=20A. Does this means with that with constant DC voltage between collector and emiter I will be able to put through the collector 20 Amperes for long time if I place the transistor on sufficiently large heat sink ? Or this 20A collect emitter current is impulse ?
http://www.onsemi.com/pub/Collateral/MJ15003-D.PDF
Thanks,
Dimitar
http://www.onsemi.com/pub/Collateral/MJ15003-D.PDF
Thanks,
Dimitar
Dimitar13 said:Does this means with that with constant DC voltage between collector and emiter I will be able to put through the collector 20 Amperes for long time if I place the transistor on sufficiently large heat sink ?
Yes, but I strongly suggest not to use this device at such collector current.
20A is the MAXIMUM rating.
If you are planning to handle 20A, I suggest to parallel 2 or more transistor.
You cannot pass 20A because that SOA graph is at a junction temperature of 25 degrees C. As soon as you pass a few amps the Tj will rise so the current has to be derated.
richie00boy said:You cannot pass 20A because that SOA graph is at a junction temperature of 25 degrees C. As soon as you pass a few amps the Tj will rise so the current has to be derated.
Derated on a practical heatsink, yes. 200W with *case* temperature of 25C, not Tj. The junction will be at 200C (or, more correctly, is speced to be at 200C or less). If the case could be mainatained at 25C, you should be able to push 200W DC through it. The only way to to that is to drop the heat sink temperature below 25C and hold it there with 200 watts trying to heat it up the whole time. An ice bath is good for short term testing, but useless in the real world.
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