nA CCS mystery

If I understand the intended behaviour of the circuit of post #13 correctly, its input is supposed to be a current input, so the lower the impedance the better. Then why put 1 megohm in series with the virtual ground?

The 10 megohm is straight in series with one of the op-amp inputs and should theoretically do nothing (except adding some noise).

All I could think of, is that the 1 megohm keeps things stable when you connect something capacitive to the input and that the 10 megohm limits the current through the op-amp input during overload or ESD discharge.

I overlooked it at first, but R1 has no impact on the current gain from the input to the meter. Maybe it limits the maximum current through the current meter, or it sets the gain if you also want to look at the op-amp's output voltage? You could connect a scope straight to the op-amp's output without any buffer.
 
The - input is currently lifted and goes directly to the source of the transistor and the 100M resistor. The leakages are probably collected by this resistor and the reed relay, but practically everything in the vicinty is tied to the +12V, which is even "better" than the +input, since leakages from there should increase the CCS current, not reduce it
 
I am aware of that: I have built a teraohmmeter 10 or 20 years ago, and it does work, but it is demanding regarding guarding, shielding, etc.
I wanted to build a lighter, easy to use instrument, hence the "cheap and dirty" denomination.
I did my homework, and tested every critical part of the circuit, which is why I landed on the BSP92 as current controller (other types like BSS92 had a sizeable leakage).
As I said earlier, I opted for this "non-optimal" topology for simplicity reasons (direct voltage to resistance relationship).
I have somewhat progressed: I have retested everything in-circuit, and found nothing untoward.
Kirchoff laws have to be respected though, and since the components aren't the culprits, the parasitic current(s) must originate from somewhere else.
I had already milled the space between the critical nodes, but only on the solder side: that's where problems are the most likely, because of contamination, rosin residues, etc.
It didn't change anything.
I then resorted to scraping the component side: I couldn't use milling, as it would have damaged the components. It looked promising: the CCS current seemed to increase. Then disaster struck: the circuit touched the raw supply, resulting in a fried 78L12.
I mended the devastation, and I went further: I milled through the perfboard, but from the bottom side, creating isolated islands around the critical nodes .
It did improve matters: with the 250Meg resistor, the current was increased by 50pA. Not enough, but a step in the right direction.
This makes me think that the problem is caused by contamination trapped between the FR4 base and the top solder mask (which is purely decorative, since the perfboard is single-sided).
My only gamble was the insulation of FR4, but it seems to be the only point of failure. Now I have to find ways of rescuing the project without a complete overhaul: I have milled all that could be milled, and I have to be creative
I understand the motivation for a simple solution, my brain operates that way!


I wouldn't call myself an authority in these measurement circles, but I am familiar with the process of making and taking high accuracy GigOhm and well as uOhm measurements, due to the nature of my profession, as well as calibration methodology (I have an old Keithley low level measurement book, that was mentioned, and several other very useful texts on the subject, as well as time and access to calibration standards and equipment.)

What is difficult overcome in the reverse methology of forcing amps measuring volts:

An accurate and temp co stable high resistance measurement shunt for IV conversion.

Prevention of induced noise in the circuit and influence on operational stability.

Component leakage currents....

You must consider that even the ancient and venerable BAT50 pico amp diode, and its rated leakage current, low as it is, influencing the circuit - no issue perhaps, but that is for a very very low leakage device, difficult to match or approach matching in other devices.

as an aside, modern low leakage diodes are not anything of the kind- typically they have an order of magnitude or more reverse leakage current, typically in the nA rather than pA.

At this level, a nanoAmp matters.

so perhaps, thinking aloud and trying to be helpful to this topology, even though I disagree with it....

one could use a diode reverse leakage to determine the excitation current for the circuit, by calibrating a pA leakage diode at a range of temps and measuring actual leakage. Then using this diode as a known within the circuit.

just an idea (I have a resistance bridge that uses the leakage of 741 as a diode current reference, that partially inspired it- note though, tht this is for low resistances 🤣)
 
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The reverse current of a semiconductor junction is heavily (but probably predictably) dependent on temperature, and other factors, some controllable, like light, some more random, like crystal defects progression, accumulated dose of background radiation, etc.
The input current of an opamp might be more predictable: the temperature dependence of the input transistors beta could compensate the leakage increase, but the device used must be selected carefully.

The forced current method has another advantage: the cold terminal is the ground, which can be advantageous to test bulky devices, or permanently earthed devices
 
The reverse current of a semiconductor junction is heavily (but probably predictably) dependent on temperature, and other factors, some controllable, like light, some more random, like crystal defects progression, accumulated dose of background radiation, etc.
The input current of an opamp might be more predictable: the temperature dependence of the input transistors beta could compensate the leakage increase, but the device used must be selected carefully.

The forced current method has another advantage: the cold terminal is the ground, which can be advantageous to test bulky devices, or permanently earthed devices
Certainly, light and temps.

Forced current does not have an inherent advantage, that I can see (I can't see why a voltage driven system cannot be used on earthed devices as well - since its generally this way, in real life, with installed plant)


The input bias current of an op amp could be used, provided you can find one low and consistent enough. Again maybe MOSFET, but 1pA gate charge current, I'm not confident that is good enough- especially in the presence of noise, gate capacitance, and the likely huge DUT insulation resistance.

I wonder if you are seeing issues from the time needed to charge the gate Capacitance, through the DUT resistance - and hence not approaching anything close to threshold volts?

Also my point mentioning reverse diode leakage, is to say that this will be occurring within the MOSFET gate leakage, and also the inherent structural diode, and its own reverse leakage current.
 
Some questions

What is the device under test? Is it a resistor or are you measuring insulation resistance of something?

How many significant digits do you require?

I have access to a calibrated DMM7510. Measuring 1G ohm has 9000 ppm uncertainty. If you look at the rise of uncertainty per decade, the uncertainty at 100G would using FIMV would be at least 10%. Measuring a 1G shielded resistor-in-a-box yields 4 Meg ohm RMS of noise. So 3 good digits at best.

The DMM7510 uses a 10M resistance in parallel with 0.69 uA current source to measure a 1G resistor.

Have you tried placing a 10M resistor in parallel with your device under test? You can do the math and correct your voltage reading. Voltage will reduce slightly when you place your DUT across the 10M resistor.
 
If I understand the intended behaviour of the circuit of post #13 correctly, its input is supposed to be a current input, so the lower the impedance the better. Then why put 1 megohm in series with the virtual ground?

The 10 megohm is straight in series with one of the op-amp inputs and should theoretically do nothing (except adding some noise).

All I could think of, is that the 1 megohm keeps things stable when you connect something capacitive to the input and that the 10 megohm limits the current through the op-amp input during overload or ESD discharge.

I overlooked it at first, but R1 has no impact on the current gain from the input to the meter. Maybe it limits the maximum current through the current meter, or it sets the gain if you also want to look at the op-amp's output voltage? You could connect a scope straight to the op-amp's output without any buffer.
You should study basic op amp amplifier implementations. The T-network is a variation on ordinary op amp amplifier topology. The - and + inputs are virtually the same voltage and no current flows into either node for an ideal op amp. The output drives its node to make the + and - inputs the same voltage.

The resistors in the picoammeter circuit form voltage dividers between the input and the output such that current amplification is much greater than when not using a T network.

A T network can be used to create a faux 1 Terra ohm resistor using two 1 meg resistors and a 1 ohm resistor. It is an instructional exercise to make a spreadsheet to calculate the effective resistance for various combination of resistors. From inspection the input of this T network is a 1,000,000 to 1 divider. 10 volts in produces 10 uV across the 1 ohm resistor. The output 1 meg resistor creates 10pA from the 10uV across the 1 ohm resistor. Hence these 3 resistors behave the same as a 1T resistor.
 
The reverse current of a semiconductor junction is heavily (but probably predictably) dependent on temperature, and other factors, some controllable, like light, some more random, like crystal defects progression, accumulated dose of background radiation, etc.

Indeed.

The input current of an opamp might be more predictable: the temperature dependence of the input transistors beta could compensate the leakage increase, but the device used must be selected carefully.

If it's an op-amp with an MOS input, the leakage is dominated by ESD protection network leakage, which is largely or completely diode reverse leakage.

If it's a JFET input op-amp, it's the gate leakage, which is also mainly junction leakage.

If it's a bipolar op-amp, the input bias current is usually way too high.
 
You should study basic op amp amplifier implementations. The T-network is a variation on ordinary op amp amplifier topology. The - and + inputs are virtually the same voltage and no current flows into either node for an ideal op amp. The output drives its node to make the + and - inputs the same voltage.

The resistors in the picoammeter circuit form voltage dividers between the input and the output such that current amplification is much greater than when not using a T network.

A T network can be used to create a faux 1 Terra ohm resistor using two 1 meg resistors and a 1 ohm resistor. It is an instructional exercise to make a spreadsheet to calculate the effective resistance for various combination of resistors. From inspection the input of this T network is a 1,000,000 to 1 divider. 10 volts in produces 10 uV across the 1 ohm resistor. The output 1 meg resistor creates 10pA from the 10uV across the 1 ohm resistor. Hence these 3 resistors behave the same as a 1T resistor.
I know that, but as the meter measures the current, R1 drops out of the equation - unless you also want to connect the op-amp's output to some kind of voltage measuring device, of course. The transfer from input current to current through the meter is simply 1 + R5/R2 when the 10 Gohm resistor is called R5, with the sign conventions as in this sketch.

IMG_20230107_172509~2.jpg

Hence my question about the purpose of the other resistors, R1, R3 and R4.
 
Some questions

What is the device under test? Is it a resistor or are you measuring insulation resistance of something?
It could be anything, resistor, insulation resistance to GND, etc
How many significant digits do you require?
My crude DPM has 3 digits: as I said, it is a quick and dirty tester
Have you tried placing a 10M resistor in parallel with your device under test? You can do the math and correct your voltage reading. Voltage will reduce slightly when you place your DUT across the 10M resistor.
Yes, of course, I know the tricks, but my goal is not to measure a specific resistor, I want to build an easy to use instrument, usable without math or mental gymnastic: connect the test terminals and read the value
 
Ok. That is what I wanted to know.

An ideal current source has infinite output impedance. Your 100G resistance is much closer to infinity than 0 ohms. A high impedance current source driving some cabling to a high impedance load is going to pick up electrical and magnetic noise. If a simple and elegant FIMV megger could be built, you would find them on eBay from China.

An ideal voltage source has 0 ohms impedance. A low impedance source driving some cabling to a high resistance load will be much more immune to stray electric and/or magnetic fields. This is why elctrometers are FVMI and not FIMV. Another reason why FVMI is superior is that leakage at the high side is not measured. With FIMV, any leakage on the high side is an error term.

If I wanted to build one of these, I would make a simple op amp amplifier with the DUT in the feedback loop and the gain setting resistor at 1G or 10G. The op amp output driving your meter directly. This is the simplest current source.
 
After some reflection, I have noticed an inconsistency in the values I measured.
This is the circuit in test mode:

1673111573961.png


IL are the possible unknown current leakages.
What is strange is that I1 and I4 seem to track quite closely: with R2 at 250M, the currents are almost identical, ~250pA.
With the resistor at 900M, they both fall to zero.

That's not logical: if IL steals some current from the source node, I1 will remain the same unless IL is much too large. However, I4 should decrease by IL, but it doesn't, and I cannot find a satisfactory explanation. The circuit behaves more or less as if the 100mV reference was reduced, which it isn't of course, it comes from a low impedance and is rock-stable

One thing is certain: the problem is caused by leakages, since cutting through the FR4 improved the situation
 
If I wanted to build one of these, I would make a simple op amp amplifier with the DUT in the feedback loop and the gain setting resistor at 1G or 10G. The op amp output driving your meter directly. This is the simplest current source.
Yes, I studied the possibilty, and Marcel also proposed it.
In the end I rejected it because none of the test terminals is grounded, and it requires a bipolar supply. This version just requires a 15V unipolar supply (the voltmeter module only accepts a positive input)
 
After some reflection, I have noticed an inconsistency in the values I measured.
This is the circuit in test mode:

View attachment 1127386

IL are the possible unknown current leakages.
What is strange is that I1 and I4 seem to track quite closely: with R2 at 250M, the currents are almost identical, ~250pA.
With the resistor at 900M, they both fall to zero.

That's not logical: if IL steals some current from the source node, I1 will remain the same unless IL is much too large. However, I4 should decrease by IL, but it doesn't, and I cannot find a satisfactory explanation. The circuit behaves more or less as if the 100mV reference was reduced, which it isn't of course, it comes from a low impedance and is rock-stable

One thing is certain: the problem is caused by leakages, since cutting through the FR4 improved the situation
How do you measure these currents? Are you sure both op-amps are stable for all combinations you tried? Does the output voltage of U1 go outside its specified range? (It shouldn't, but clearly there is something happening that shouldn't happen.)