headroom/dropout V, output compliance V range, output impednace vs frequency requirements are also useful for design in addition to actual Tempco/power stability requirement number
LM317 cascoded with IXYS depletion mode 6 A power MOSFET may meet some sets of requirements
I'm looking for a solution that only uses discrete devices.
Here is the scenario I'm trying to avoid for a circuit such what is attached (sorry for the crude drawing):
Constant bias being applied to the BJT, say 1V, and vbe at t=0 is 0.7, so the current is 0.3/R. And lets just say R is 0.3 for a 1A bias. I'm looking to avoid this:
BJT heats up > reduction of vbe > vbe/r current goes up > device heats up more > further reduction in vbe > etc
Then thermal runaway. Basically I'm looking for a circuit that has good tracking of the bias being applied to the BJT. I suppose I could mirror the current and thermal match, but that would add another power device. Looking to avoid that too.