BJT internal emitter resistance

A recent thread discussed the internal emitter resistance of BJTs and its effects on thermal stability.

Since I was curious, I fitted a BJT model with an emitter resistor to the Vbe-versus-Ic graph in the MJ15003 datasheet. A reasonable match was produced with 40 milliohms at 25C and a 0.16 milliohm/C temperature coefficient. The Vbe sensitivity to temperature was -2.1mV/C and Is was 10^-12 A.

datasheet.png
model.png



I am curious if anyone has similar data for other power transistors.
Ed
 
That's the 2SC3519 graph I found too.

Yes, the internal emitter resistance has a positive temperature coefficient.

The internal emitter resistance causes the Vbe curve to bend upwards in the semilog plot for the MJ15003. The temperature coefficient causes the 150C curve to intersect the 25C curve.
Ed
 
You have two devices here, the Toshiba 2SC5200 and the Sanken 2SD2560, quite different curves.
 

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Right, but these two, also from Sanken, are not and the crossings are much less pronounced than the 2SC5200.
 

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We generally hope that the curves are made from isothermal measurements, IE die temperature is close to the same throughout the measurement. But it is not always specified and even if an isothermal measurement is done it may not be a very good one. So I have never been confident in the validity of fitting from these curves, especially if they seem to show out of bandgap behavior.