I wonder what the limitations of this are:
Bias a mosfet with lots of current, so that Vgs is reasonably large. Then squeeze down Vds so that you get it in the triode region, where the device I-V characteristics are more linear.
Maybe it's better to do this with a differential configuration and bias the cascode to the common source point of the FETs.
Bias a mosfet with lots of current, so that Vgs is reasonably large. Then squeeze down Vds so that you get it in the triode region, where the device I-V characteristics are more linear.
Maybe it's better to do this with a differential configuration and bias the cascode to the common source point of the FETs.
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To get the triode region up to swing +/- 3 volts,
an IRF510 would have to be biased at about 5 amps,
and IRFP240 at 20 amps or so. You would definitely
be at the absolute limits of operation.
Maybe some other type of Mosfet, such as the early
Toshiba power parts might get you there more easily.
an IRF510 would have to be biased at about 5 amps,
and IRFP240 at 20 amps or so. You would definitely
be at the absolute limits of operation.
Maybe some other type of Mosfet, such as the early
Toshiba power parts might get you there more easily.
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