|5th February 2004, 09:22 PM||#11|
Join Date: Jan 2002
Location: Livermore, CA
We have been developing SiC JFETs for some years (since 1999), and another generation will be undergoing testing around May-June. They are intended more for HV switching applications, though, being combined with an 55V Si MOSFET to make a cascode switch. A single switch has an Ron of about 350-400 milliohms, with a breakdown voltage of 1500V. No, that's not a typo. The chip isn't all that large (4.5 mm2), so it's not sized for linear applications, but for switching, and minimum conduction loss.
New generations of 600V diode will be released later this year, and probably 300V by the end of the year.
Infineon Technologies, NA.
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