New VFET build

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The drain-source resistance represents the opposing force controlling charge behavior in the inversion channel, which is finally determinative for signal transfer consistency with respect to excitation. A low resistance implies near-resonance (desirable for fast switching), that is, poor control. The nominal value of Rds for 2SK60 is 16 ohms at 1 A.

The Siliconix series are old style vertical MOSFETs and I dare say that they are far better for audio than any modern efficient FET.
 
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Both low capacitance and large channel resistance benefit frequency response as resistance reduces amplitude.
The usual method of decreasing Rds by heavier channel doping, in all respects increases signal distortion.
Beside the Sony VFET, also the Hitachi LFET has excellent high frequency response and, not by accident, large channel resistance. There is a qualitative gap between these and the rest of species.
 
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