Hitach lateral MOSFETs - back in March 1978

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hello,

I am here attaching the original schematics of the first three power amplifiers designed by Hitachi, using Hitachi lateral MOSFETs (2SK134/2SJ49).

- in March 1978 : the HMA-7500, separate power amp

- in June 1979 : the HM-5700, integrated pre- and power amp

- in October 1980 : the HMA-7500, separate power amp deeply revisited with JFET-input, full-DC amp, and an intriguing "Super Linear" biasing scheme, kind of "non switching" class B arrangement.

Any comments welcome.
 

Attachments

  • Hitachi HMA-7500 (March 1978).jpg
    Hitachi HMA-7500 (March 1978).jpg
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  • Hitachi HA-5700 (June 1979).jpg
    Hitachi HA-5700 (June 1979).jpg
    173.1 KB · Views: 1,458
  • Hitachi HMA-7500 MK2 (October 1980).jpg
    Hitachi HMA-7500 MK2 (October 1980).jpg
    196.7 KB · Views: 1,568
  • Hitachi HMA-7500 MK2 (October 1980) - Super Linear.jpg
    Hitachi HMA-7500 MK2 (October 1980) - Super Linear.jpg
    181.7 KB · Views: 1,408
For replacement this 2SK134/2SJ49 (respectively 2SK135/2SJ50) I want to know the appropriate parts which are currently available and not out of production. Are this types a good choice?
TT electronics Semelab Limited - Magnatec Lateral MOSFETs for Audio
Magnatec. ALFET Lateral MOSFETs

There are also various types from Hitachi's successor brand: RENESAS:
Renesas Technology America - Power MOSFETs for General Amplifier
but unfortunately there are no TO-3 outlines in opposite to Semelab.

2SJ160/161/162 and 2SK1056/57/58 are in fact exactly the same devices as the old faithful 2SJ48/49/50 and 2SK133/34/35.
Only the casing has been changed from TO3 to TOP3...
 
Here are my 2SK1058 and 2SJ162 models.
I use them in MultiSim.
You can use the same models for 2SK1056/57 and 2SJ160/161
Think it is only voltage rating that differs.

.SUBCKT MSK1058 1 2 3
* TERMINALS: 1 2 3
M1 9 7 8 8 DMOS L=1U W=1U
RD 1 9 80.4M
RS 3 8 5.28M
RG 2 7 21.4
CGS 7 8 410P
EGD 12 0 7 9 1
VFB 14 0 0
FFB 9 7 VFB 1
CGD 13 14 128P
R1 13 0 1
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1
D2 15 0 DLIM
DSD 8 1 DSUB
LS 30 3 7.5N
LD 1 9 4N
.MODEL DMOS NMOS (LEVEL=3 THETA=85M VMAX=163K ETA=2.2M VTO=.2 KP=.999)
.MODEL DCGD D (CJO=128P VJ=.6 M=.68)
.MODEL DSUB D (IS=29N N=1.5 RS=61.4M BV=160 CJO=802P VJ=.8 M=.42 TT=252N)
.MODEL DLIM D (IS=100U)
.ENDS

.SUBCKT msj162 1 2 3
* TERMINALS: 1 2 3
M1 9 7 8 8 DMOS L=1U W=1U
RD 9 1 110.4M
RS 8 3 25.28M
RG 7 2 17.4
CGS 7 8 760P
EGD 12 0 1 2 1
VFB 14 0 0
FFB 9 7 VFB 1
CGD 13 14 467P
R1 13 0 1
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1
D2 15 0 DLIM
DSD 9 8 DSUB
LS 8 3 7.5N
LD 1 9 4N
.MODEL DMOS PMOS (LEVEL=3 THETA=90M VMAX=183K ETA=6.5M VTO=-.2 KP=1.109)
.MODEL DCGD D (CJO=467P VJ=.6 M=.68)
.MODEL DSUB D (IS=29N N=1.5 RS=61.4M BV=160 CJO=900P VJ=.8 M=.42 TT=252N)
.MODEL DLIM D (IS=100U)
.ENDS
 
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