Sony Vfet

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Power FETs by David Shortland - Practical Electronics November 1978 page 6

Last page - no 6!:cool:
 

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Michael Rothacher did some characterization in the L'Amp article.
There are a few data in the AES preprint no 1158 for the AES convention in Oct/Nov 1976. But this is for a PWM amplifier, so no much for linear amplifiers there.
There are a set of curves in the AES preprint, figure 7, as attached. Taken at VGS=0.
Besides that I think we know:
Vp = -42 V (pinch off voltage or VGS0)
Pd = 95 Watt
Id = 10 A
gm = 0.4 S (Siemens) (gm = transconductance) - this according to Rothacher.
2SK82 is n-channel.
2SJ28 is p-channel.
We know the case is TO-3, and the pin-out is also given in the L'Amp article.
I thought I had some input capacitance data and Ron data, but where!:apathic:
Also, we do not know much about the different grades, KD-33, KE-33 etc.
BTW it was proposed to me to look at the datasheet for the 2SK60 and consider the 2SK82 to be two 2SK60 dies in parallel. (But as I understand the 2SK82 is a one-die VFET.)
Initially I wanted to make Spice models, but I have decided it is better to design by experience, so I am going the empirical way and will start out with a L'Amp to gather experience.

/RK
 

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