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IRF building Gallium Nitride FETs
IRF building Gallium Nitride FETs
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Old 23rd September 2008, 07:39 PM   #1
drdagor is offline drdagor  United States
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Default IRF building Gallium Nitride FETs

The URL goes to an interesting article about Gallium Nitride FETs coming from International Rectifier...


The article speculates that IRF is hard at work on a set of enhancement mode, high power fets using their recently patented GaN technology.

Sounds like just the thing for a power house version of the Pass F5 or something run off the National LM4702 driver chip.

Anybody heard anything more specific than this piece from an industry rag?
Dr. Dagor
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Old 23rd September 2008, 08:26 PM   #2
ostripper is offline ostripper  United States
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Looks like NEC (japan)and others already sell them for RF usage
(transmitters and cellphones).


These devices seem to be very fast (low capacitance)
with extremely long lifetimes.

Here is a paper on GA/N devices:

Hopefully these new devices will bring about the same revolution
that GA/N has brought to the LED lighting industry.

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Old 23rd September 2008, 08:31 PM   #3
wg_ski is offline wg_ski  United States
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Most GaN in my experience is depletion mode. If they managed to get Vpo less negative, it may be sort of somewhere in between (some current at Vgs=0). Also, don't hold out much hope for P-channel devices. If they did make them, it would end up defeating the purpose - which is operation well into the GHz range.

Voltage can be staggeringly high for a given fT. Not so sure about DC SOA - if it's as good as good-ol' Si Mosfet. That's not the usual purpose for those devices.
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