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|14th June 2012, 05:22 PM||#41|
Join Date: Jun 2005
Location: Fort Worth, Texas
Applying bias to the diaphragm does result in a charge induced negative tension increment.
I posted some plots of this behavior several years ago when I didn't understand what was going on.
arend-jan was kind enough to point me to the Peter Baxandall chapter on ESLs which discusses it in detail.
Diaphragm Resonance change with HV bias
Taking a look at the negative stiffness term of the force equation....
You can see that it increases as square of Vbias, but decreases as cube of D/S spacing. So, for the same panel area and diaphragm tension, if you double the D/S spacing and double the Vbias value to obtain the same efficiency, the negative stiffness term will have less affect on Fs.
Plots comparing negative stiffness trends for different D/S spacing posted here (Attachment 3):
Current vs voltage drive ESL?
In your case you have small areas due to segmentating the diaphragm into smaller sections, and your D/S is fairly large(3-3.5mm I think you had said). So, you may see only very small changes in Fs with bias change until you start getting above 8kV or so.
Last edited by bolserst; 14th June 2012 at 05:25 PM.
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