why papa doesnt choose Lateral Mosfets?

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Not all lateral mosFET packages have the integrated gate protection Zeners.

Where the internal Zeners are fitted, it is still wise to fit external gate protection Zeners, that can be DESIGNED to survive known overload conditions.

The omission, or inclusion, of the gate protection Zeners may be why some builders claim different "sound" characteristics of different packages.
 
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If that were a mechanism for an alleged different sound, then it just proves how bad the protection is in that an omitted Gate protection Zener is probably the biggest sin a Builder can commit with respect to a mosFET output stage.

Put in the obligatory gate protection Zener and that "difference" is removed.
 
the power capability of both are similar.

Hitachi 2SK1058 (lateral)
V(BR)DSX = 160V(min)
ID=7A
PD=100W
Ciss=600pF(typ)

IRF630N (Hexfet)
V(BR)DSS = 200V(min)
ID=9A
PD=82W
Ciss=575pF(typ)

IRFP240 (Hexfet)
V(BR)DSS = 200V(min)
ID=20A
PD=150W
Ciss=1300pF(typ)

It's clear that the IRFP240 is in quite a different class than the IRF630N or 2SK1058. Shouldn't we be comparing apples with apples?

The continuous DC current rating is almost irrelevant
Obviously this is not so.
 
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Refer to the attachments if US suppliers are preferred.

Real 2SK1058/2SJ162 are still not difficult to find in China, at around USD5 a pair, but the shipping cost to US is very high, and it's impossible to deal with them in English.
 

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  • 2SJ162.JPG
    2SJ162.JPG
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1) most important
...the built in temperature compensation
...controls idle current plus raises channel
...resistance in case of overdriving
2) low threshold voltage
...doesn't waist as much front end
...swing as IRF types
3)built in gate zeners
...you can add these externally but
...why ?
4)linearity
...a pair of Renesas sans source resistors
...@ ~ 100ma. (ab follower stage) can do
...0.06% THD into 8 Ohm
...I don't know about IRF similar setup
 
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