|28th March 2013, 11:09 PM||#11|
The one and only
I have spent some time with this, and I can tell you about a couple of
issues. The SITs that I've been able to play with required a seriously
negative Vgs in order to bias the part at the relatively low currents and high
Vds voltages, in many cases near the Gate-Source diode breakdown voltage
of the part.
On top of that, the Gate leakage current gets higher at these Vgs figures.
In the end, SITs are a good emulation of triodes at the lower voltages and
higher currents needed by speakers, which is nice. If you really want to use
SET transformers, you are really probably better off with tubes.
|31st March 2013, 09:07 AM||#12|
Join Date: May 2008
Thanks for the inputs. I wasn't really thinking of the SITs. Last I checked it was made of unobtanium unless one is a relative of a certain Nelson Pass. I was looking at more of the bipolar transistor, particularly the ztx series.
The other issue I was thinking about is the additional voltage generated by the transformer coil and if could damage the transistor. So do you think it would be wise to put a diode across the transformer?
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