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Old 18th January 2013, 11:51 PM   #11
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Old 19th January 2013, 12:08 AM   #12
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Old 20th January 2013, 07:39 PM   #13
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OK, so I set up a circuit to quick test one of the E120R10X that SemiSouthFan
sent me vs the R100 parts.

The stage was single-ended Common Source with no feedback driving 8 ohms.

The bias was a fixed 1.8 amps DC, and the Vgs was set for 20V Drain voltage.

The signal source was 600 ohms.

The Vgs of the R100 part was about 1.3V and the R10X was about 1.8V

Both exhibited nearly the same gain figures (~32 db) and bandwidth (see
resp curve below) and similar but not identical distortion numbers. (see
distortion curve below). Under these conditions, similar to the F6, the R10X
has generally lower distortion.

Two items of difference:

In the R10X I noted a higher Gate leakage figure of about 45 uA. Not a big
item, but something to allow for.

I also noted more drift in the R10X bias figure vs temperature, in fact I ended
up putting it in a simple control loop to stabilize it when running these curves.

In the F6, likely we would have DC degenerate or otherwise control the bias
current of the bottom device, which is of course not a big problem.

Attached Images
File Type: gif R10X RESP.gif (8.2 KB, 321 views)
File Type: gif R10X DAMP.gif (6.4 KB, 315 views)
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Old 21st January 2013, 04:13 AM   #14
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Originally Posted by Nelson Pass View Post
OK, so I set up a circuit to quick test one of the E120R10X that SemiSouthFan
sent me vs the R100 parts.

Thank you Nelson for taking a look at these parts. These parts are nominally identical to the R100 (same production line and design). They are R100 chips that sorted for threshold voltage about a quarter to a half volt higher than the R100 spec would allow. The SemiSouth engineering department had them packaged in TO247 to see what could be done with higher threshold parts in addition to the chips off these wafers that met the original SJEP120R100 spec.
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