IXYS release the following device recently IXTK110N20L2
Its only available as a N channel device but it might be useful non the less
there is also much higher voltage devices available from the same family for those wanting to build a amp for electrostatic devices.
Perhaps papa could comment as to the usefulness of this device for audio
Its only available as a N channel device but it might be useful non the less
there is also much higher voltage devices available from the same family for those wanting to build a amp for electrostatic devices.
Perhaps papa could comment as to the usefulness of this device for audio
Speaking of Ixys: Did you ever measure any of their P-channel mosfets for linearity?
I got Ixys N-channel mosfets as surplus pretty cheap, and buying their p-channel counterparts to have complementary pairs would make most sense for me. It would be good to know that they don't have the same IRF linearity quirk.
this could be a very fine MOSFET for audio - see datasheet
http://ixdev.ixys.com/DataSheet/DS100195(IXTK-TX110N20L2).pdf
the not presently appropriate P-channel part is only a problem for beginners and inexperienced engineers, but not for advanced developers of audio amplifiers. Companies such as Quad (Super-ß and Current Dumping), SUMO (Circlotron / CSPP), NAD ("306", Quasi-complementary) and Creek (Totem Pole) has introduced already more as 10 years ago and demonstrated, that P-CH MOSFET and PNP transistors for output power stages are not necessary. The company "Aussie Amplifiers" (Amplifier Kits - Audio Amplifier Modules - MOSFET Amps) also work with only one genus MOSFETs according to the philosophy of Bengt Olsson (Electronics World:" Better Audio from non-complements? "Bengt Olsson Dec 1994 page 988)
Thus, P-Channel MOSFETs for audio amplifiers really have no justification in currently days.
In this context, I have create an detailed overview about a wide range of power amp concepts with only N-Channel MOSFETs in power output stages - about the URL
http://www.diyaudio.com/forums/soli...better-audio-non-complements-audio-power.html
http://ixdev.ixys.com/DataSheet/DS100195(IXTK-TX110N20L2).pdf
the not presently appropriate P-channel part is only a problem for beginners and inexperienced engineers, but not for advanced developers of audio amplifiers. Companies such as Quad (Super-ß and Current Dumping), SUMO (Circlotron / CSPP), NAD ("306", Quasi-complementary) and Creek (Totem Pole) has introduced already more as 10 years ago and demonstrated, that P-CH MOSFET and PNP transistors for output power stages are not necessary. The company "Aussie Amplifiers" (Amplifier Kits - Audio Amplifier Modules - MOSFET Amps) also work with only one genus MOSFETs according to the philosophy of Bengt Olsson (Electronics World:" Better Audio from non-complements? "Bengt Olsson Dec 1994 page 988)
Thus, P-Channel MOSFETs for audio amplifiers really have no justification in currently days.
In this context, I have create an detailed overview about a wide range of power amp concepts with only N-Channel MOSFETs in power output stages - about the URL
http://www.diyaudio.com/forums/soli...better-audio-non-complements-audio-power.html
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Mean you "burning amplifier festival 2009" or is BAF-09 already a new project?I have an Ixys part in the amplifier I am presenting at BAF 09.
carpenter tiefbassuebertr said:
my English is not good and my colloquial (conversational) English is even worse;
mean you what of this topology I would prefer?
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CISS ten times higher compare to normal MOSFETs
I din't know, what you mean with the keyword "Normal MOSFETs"
as I compare the values CISS COSS and CRSS I read in the datasheets
(by VGS=0V, VDS=20V and f=1MHz) follow pF values
http://ixdev.ixys.com/DataSheet/DS100195(IXTK-TX110N20L2).pdf
http://www.irf.com/product-info/datasheets/data/irf540n.pdf
http://www.datasheetcatalog.org/datasheet/stmicroelectronics/9387.pdf
IRF540-D Datasheet pdf - TMOS E-FET Energie Fangen Effekt-Transistor N-Führung Verbesserung-Modus Silikon-Gatter auf - ON Semiconductor or
http://www.datasheetcatalog.org/datasheet/on_semiconductor/IRF540-D.PDF
2SK134 datasheet pdf datenblatt - Hitachi Semiconductor - LOW FREQUENCY POWER AMPLIFIER ::: ALLDATASHEET :::
http://documentation.renesas.com/eng/products/transistor/rej03g1004_2sk2220ds.pdf
http://www.semelab.com/pdf/magnatec/BUZ900P.pdf
1) IXYS IXTX110N20L2: 23/2160/320 (lowest CISS what I have ever see regarded the other parameters, for very low driver charge current)
2a) IRF IRF540: 1960/250/40 (VGS = 0V, VDS = 25V)
2b) ST IRF540: 870/125/250 (VGS = 0V, VDS = 25V)
2c) ON IRF540 : 1460/390/320
3) Hitachi 2SK134: 600/350/10 (but VGS 5V/VDS 10V)
4) Renesas 2SK2221: 600/800/8 (also VGS 5V/VDS 10V)
5) Semelab BUZ900 500/300/10 (VGS not mentioned, VDS 10V)
I din't know, what you mean with the keyword "Normal MOSFETs"
as I compare the values CISS COSS and CRSS I read in the datasheets
(by VGS=0V, VDS=20V and f=1MHz) follow pF values
http://ixdev.ixys.com/DataSheet/DS100195(IXTK-TX110N20L2).pdf
http://www.irf.com/product-info/datasheets/data/irf540n.pdf
http://www.datasheetcatalog.org/datasheet/stmicroelectronics/9387.pdf
IRF540-D Datasheet pdf - TMOS E-FET Energie Fangen Effekt-Transistor N-Führung Verbesserung-Modus Silikon-Gatter auf - ON Semiconductor or
http://www.datasheetcatalog.org/datasheet/on_semiconductor/IRF540-D.PDF
2SK134 datasheet pdf datenblatt - Hitachi Semiconductor - LOW FREQUENCY POWER AMPLIFIER ::: ALLDATASHEET :::
http://documentation.renesas.com/eng/products/transistor/rej03g1004_2sk2220ds.pdf
http://www.semelab.com/pdf/magnatec/BUZ900P.pdf
1) IXYS IXTX110N20L2: 23/2160/320 (lowest CISS what I have ever see regarded the other parameters, for very low driver charge current)
2a) IRF IRF540: 1960/250/40 (VGS = 0V, VDS = 25V)
2b) ST IRF540: 870/125/250 (VGS = 0V, VDS = 25V)
2c) ON IRF540 : 1460/390/320
3) Hitachi 2SK134: 600/350/10 (but VGS 5V/VDS 10V)
4) Renesas 2SK2221: 600/800/8 (also VGS 5V/VDS 10V)
5) Semelab BUZ900 500/300/10 (VGS not mentioned, VDS 10V)
You're mixing picoFarads with nanoFarads, the 23nf IXYS part == 23000picoFarad which is of course more than the IRF540's 1960picoFarad
Smaller resistors are necessary to deal with the higher C values so as not to cause a reduction in high frequency response. More importantly might be the non-linear C increase as the device D-S voltage lowers. But in the case of the IXTK110N20L2 that happens well bellow 5V. Uniquely good compared to MOSFETs we typically use.
what about this one http://ixdev.ixys.com/DataSheet/9ad740a9-e21c-47ce-b454-fc3a9ba842d9.pdf
Or what about this one http://ixdev.ixys.com/DataSheet/079251ea-7441-4f6d-8313-cd410e7fb8a2.pdf
Or what about this one http://ixdev.ixys.com/DataSheet/079251ea-7441-4f6d-8313-cd410e7fb8a2.pdf
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Yes, you are right, that was a mistake from me. Amazingly is, that also the use for linear amplifier was recommended in the datasheet from IXYS. So only at one stage amplifiers such "ZEN", "First Watt" and "Circlotron" this MOSFET work without trouble, because in this topologies the behaivour of capacity is like low pass filter
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