SiC JFETS

[Nelson Pass]

Low on resistance is of no value to me, nor is very high
temperature. It is strictly operation in the linear region.

[udailey]

Originally Posted by amp-guy

they seem to be concentrating on the inverter, hybrid and hybrid car markets, where the very low on resistance would give some efficency benefits.
What interests me is the insanely high operating temp capability and the reported higher linearity.

Exactly. A lot of Schottky diodes were also researched with this material. University of Tennesee did lots with these in inverters for APU's. Focus was on the military new quest for efficiency, switching to JP-1, I think, for a one fuel solution,and while upgrading all APUs for that a lot of money went to more efficient switching. Also, they wanted smaller units and the low on resistance was helpful for efficiency and size. I think IXYS will have somehing if they dont already, but if you read some ORNL sheets on portable APUs and efficient inverters you can follow the citations around and find who is/was manufacturing the devices for ORNL to test and who is now licensing the technology.
Uriah

[udailey]

Watch for devices using diamond
Seriously.
Uriah

[Bigun]

I also looked at diamond for GHz devices a decade ago. I don't know if things have changed, but there was a problem making complementary devices, diamond likes to be doped n (or is it p) and not the other way around.

It's better than SiC though, the saturation velocity for electrons in diamond is oooooout there

[amp-guy]

Originally Posted by Nelson Pass

Low on resistance is of no value to me, nor is very high
temperature. It is strictly operation in the linear region.

Very true The item of interest for us is the reported jump in linearity.
And that we like em hot.

[udailey]

So here is a link to ORNL research using Silicon Carbide devices. http://peemrc.ornl.gov/publications....ilicon_Carbide
LM Tolbert is a professor at University of Tennessee and was in charge of most of the SiC experiments. Usually the other authors were graduate assistants.
There is a HUGE amount of info on SiC here. There is a paper associated with ORNL and Tolbert that compares different materials used in switching devices. I read it a LOOOOONG time ago and dont remember much of it, but its probably in the papers in that link I just posted.
In this link http://www.ornl.gov/info/ornlreview/...ancing_pwr.pdf You will find a lot of comparison of different devices using SiC and they do include the Mosfet.
Found it, Here is the one that goes over the different materials http://power.eecs.utk.edu/pubs/epe2003_wide_bandgap.pdf
So find an article you want to read and then search for it here http://lib1.isd.ornl.gov:8182/TSEARC...fqma/tpsext/SF
Uriah