Recently, reading Wiki's article on vacuum tubes, i have noticed an update concerning an upcoming tecnology of so-called gated field emission triodes, a micro-scale tubes utilising field emission effect from a cold Spindt-type cathode, with proposals of creating, essentially, tube-based integrated circuits, for use in various RF applications.
After some search, I have managed to find limited info on them, mainly because articles describing research on these 'tubes' were not free, with only some information being free. Their advantages seem to be much increased robustness, especially mechanical, ease of manufacture, high scalability - a low-voltage, high-current IC can be produced, as well as high-voltage, low-current discrete element(just an example, instant readyness for operation, no heaters, better modulation - instead of deflecting electron flux, gate's field blocks emission at cathode itself, leading to very good HF operation.
The research on technology had started back in 1960s, with Spindt cathode being developed in 1969. Then, research seemingly faded away until recently, when FED/SED displays surfaced, as it's essentially the same technology. Recent articles tell about successful creation of integrated field-effect triode differential amplifier, but hardly of anything more.
Of course, there is little information to think about, but nevertheless, these devices do seemingly open some new possibilities. I'm intrested, if these devices will replace the current tubes, not only transistors in RF? Will they allow a OTL "tube" amp with essentially transistor schematics? Will they allow for easy direct-drive ESL amp? These devices, although at least few years from production, are quite interesting..
Future micro-tube technology
