IRFB52N15D Bridge

[Wheberth]

Hi Guys!

I´d like to know what do you think about a full bridge with 8 IRFB52N15D mosfets. I will use two IR2010 MGD and the dead time will be inserted by a discrete circuit. This circuit need to be able to supply at least 2kW into a 1 ohm load. I´d like to know also if do you know any overcurrent/short-circuit protection.

Sorry about my english!

Thanks

[IVX]

i like irfb52n15 using, but you need only 100v mosfets yet. As far as i know at the such power if PCB isn't optimal implemented (that's usual for the first 10 attempt at least;-) ir2110 can work not so much robust. To prevent chip damage put the schotky between Vs-HO and COM-LO. Please keep equal all the gate resistors! :-)

[Wheberth]

And what do you think about IRFP90N50D mosfet instead 2 x IRFB52N15D Because I'd like to get 2kW into 4 ohms too.

About dthe MGD i will use IR 2010 not 2110.

Thank you Ivan

[IVX]

2010 or 2110 no matter,IMHO..

http://ec.irf.com/v6/en/US/adirect/i...ame=IRFP90N50D
Number of products found: 0.

[Wheberth]

Sorry. Ivan
I mean IRFP90N20D and IR2010

Thank you

[IVX]

IRFP90N20D is too heavy, actually IRFB52N15 (singles in the H bridge) will give 2800w@4ohm.

PS: Folks, i'm still misunderstand such power requirements as UcD700/1000, or your 2000w@4ohm.. really, maybe i'm not so young (37y.o.) or something other

[Jaka Racman]

Hi,

another thing that I can recommend is use of complementary emiter follower pairs as buffers on outputs of IR2110. FMMT618 and FMMT718 from Zetex are highly recommended.

Best regards,

Jaka Racman

[classd4sure]

Originally posted by Jaka Racman
Hi,

another thing that I can recommend is use of complementary emiter follower pairs as buffers on outputs of IR2110. FMMT618 and FMMT718 from Zetex are highly recommended.

Best regards,

Jaka Racman

Hi, can you tell me why that would be beneficial? Is it because a FET output stage doesn't have a constant output impedance?

IVX, such power is good for driving motors with, this way after you go deaf you can still use it for something

[Jaka Racman]

Hi Chris,

IR2110 output stage is unsymmetrical, upper driver is source follower, while lower driver is common source. This results in relatively slow gate rise (large tail) times and moderate gate fall times with large Mosfets. At 400kHz typical class D switching frequency those times are too slow and also power dissipation in IR2110 would be to high, since combined gate resistor is 2.8 Ohm which is even lower than 3 Ohm (IIRC) channel resistance of internal drivers. I use IR drivers with relatively large IGBTs with 2.2 Ohm gate resistors and rise and fall times are improved with emiter follower pairs. Those SOT23 devices from Zetex can source and sink 12A pulse current which is considrably more than 2A specification of IR driver alone. If you are interested I can post some scope pics of gate signals with and without buffers on Monday.

Best regards,

Jaka Racman

[classd4sure]

Hi Jaka,

Thanks for the explanation.

Zetex has a number of devices in the same general category which look good, but the ones you mentioned in question do seem like the defacto standard for driving mosfets with, it would be nice to see them in action, so yes I'm interested, if it's not too much trouble those scope pics would be educational.

I've noticed they have slightly lower power dissipation capability over other comparable Zetex BJT's but they sport lower Vsat amongst the higher current/beta ones. I'm using them in my current "design".

I can't help but think, having to buffer the driver seems to negate the purpose of having one, but I guess you still get a very fast and efficient level shift out of it.

Best regards