FYI: Hybrid MOSFET/Driver for Ultra-Fast Switching

[RaiTulo]

fast and furious? ''

"Abstract- The ultra-fast switching of power MOSFETs, in ~1ns,
is very challenging. This is largely due to the parasitic
inductance that is intrinsic to commercial packages used for both
MOSFETs and drivers. Parasitic gate and source inductance not
only limit the voltage rise time on the MOSFET internal gate
structure but can also cause the gate voltage to oscillate.
This paper describes a hybrid approach that substantially
reduces the parasitic inductance between the driver and
MOSFET gate as well as between the MOSFET source and its
external connection. A flip chip assembly is used to directly
attach the die-form power MOSFET and driver on a PCB. The
parasitic inductances are significantly reduced by eliminating
bond wires and minimizing lead length. The experimental results
demonstrate ultra-fast switching of the power MOSFET with
excellent control of the gate-source voltage."

Presented at 2008 IEEE International Power Modulator Conference, 5/27/2008-5/31/2008, Las Vegas, NV, USA

Hybrid MOSFET/Driver for Ultra-Fast Switching