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Old 26th May 2008, 12:25 AM   #11
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The differences between the LME49810 and LME49830 is the 810 has the baker clamp and clip indicator pin. If you look at the two datasheets and the diagrams then you will see some slight differences. Then the 810 has lower maximum bias voltage. May not matter for most FET uses. But you can use any of the National drivers for either BJT or FET output stages.

-SL
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Old 5th July 2008, 05:28 AM   #12
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I'm planning on making a LME49830 based amp because this IC seems to be what many of us have been waiting for. I thought it would be equally big as a LM4780, it's small! Check the mechanical drawing.
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Old 5th July 2008, 07:39 AM   #13
Dxvideo is offline Dxvideo  Turkey
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A question;
The pin "OSENSE" of LME49830 is for a kind of current limiting for output devices?
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Old 5th July 2008, 06:34 PM   #14
lineup is offline lineup  Sweden
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Quote:
Originally posted by Dxvideo
A question;
The pin "OSENSE" of LME49830 is for a kind of current limiting for output devices?
Hi Dxvideo.

From the datasheet we can read following.
I attach Figure 1 = typical amplifier application.
Quote:
OUTPUT SENSING

The Output Sense pin Osense must be connected to the system output as shown in Figure 1.
This connection completes the return path to feedback the output voltage to the mute gain circuitry inside LME49830.
If the Osense pin is not connected to the output or it is floated,
high voltage generated from the output stage may cause damage to the speaker or load.
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Old 12th August 2008, 09:28 AM   #15
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Default lme 49830

I am trying to use it as a 20 watt test amp for speaker analisys and was wondering if there are anything to be aware if running it with out transistor in the output stage
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Old 12th August 2008, 11:15 AM   #16
AndrewT is offline AndrewT  Scotland
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have you read the datasheet?
You only have mA of output if you omit the output transistors.
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Old 24th February 2009, 03:13 AM   #17
fab is offline fab  Canada
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Default Bias circuit for Laterals

Hi,

I am trying to adjust the bias circuit of the LME49830 but I can not make it work properly. Has someone tried it with Lateral mosfet where the bias voltage between N and P channels needs to vary from about 1 to 3 Vdc. Because of lower gate voltage of lateral I changed the 1.2K resistor in seris with VBE multiplier by 100 ohms....is it correct?

Thanks

Fab
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